Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
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| Creator |
Sachenko, A.V.
Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Naumov, A.V. Panteleev, V.V. Sheremet, V.N. |
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| Description |
We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential decrease, as well as those with very slight Pc(T) dependence at higher temperatures. Besides, the Au-Pd-TiPd-n-GaN contacts have a portion of Pc(T) flattening out in the low-temperature region. This portion appears only after rapid thermal annealing (RTA). In principle, its appearance may be caused by preliminary heavy doping of the near-contact region with a shallow donor impurity as well as doping in the course of contact formation owing to RTA, if the contact-forming layer involves a material atoms of which serve as shallow donors in III N compounds. The obtained Pc(T) dependences cannot be explained by the existing mechanisms of current transfer. We propose other mechanisms explaining the experimental Pc(T) curves for ohmic contacts to n - GaN and n -AlN . |
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| Date |
2017-05-31T05:22:26Z
2017-05-31T05:22:26Z 2012 |
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| Type |
Article
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| Identifier |
Investigation of resistance formation mechanisms for contacts
to n-AlN and n-GaN with a high dislocation density / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, A.V. Naumov, V.V. Panteleev, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 351-357. — Бібліогр.: 19 назв. — англ.
1560-8034 PACS 73.40.Cg, 73.40.Ns, 85.40.-e http://dspace.nbuv.gov.ua/handle/123456789/118725 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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