X-ray dosimetry of copper-doped CdGa₂S₄ single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals
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| Creator |
Mustafaeva, S.N.
Asadov, M.M. Guseinov, D.T. |
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| Description |
Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄ single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The current-dose characteristics Ir ~ E tend to linearity (α = 1) at low dose rates of X-rays. At high dose rates, α tends to 0.5, which testifies to the mechanism of quadratic recombination of charge carriers generated by X-rays in CdGa₂S₄. |
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| Date |
2017-05-31T05:23:35Z
2017-05-31T05:23:35Z 2012 |
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| Type |
Article
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| Identifier |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals / S.N. Mustafaeva, M.M. Asadov, D.T. Guseinov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 358-359. — Бібліогр.: 4 назв. — англ.
1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/118727 PACS 71.20.Nr, 72.15.Cz, 72.20.Jv, 72.80.Jc |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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