Laser-induced incandescence of silicon surface under 1064-nm excitation
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Laser-induced incandescence of silicon surface under 1064-nm excitation
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| Creator |
Kopyshinsky, A.V.
Zelensky, S.E. Gomon, E.A. Rozouvan, S.G. Kolesnik, A.S. |
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| Description |
Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended by visible changes of the surface geometry. The anomalous behavior of the parameter of non-linearity of LII is observed with the increase of laser excitation power. |
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| Date |
2017-05-31T05:25:26Z
2017-05-31T05:25:26Z 2012 |
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| Type |
Article
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| Identifier |
Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ.
1560-8034 PACS 61.80.Ba, 81.40.Wx http://dspace.nbuv.gov.ua/handle/123456789/118730 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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