Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
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| Creator |
Olenych, І.B.
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| Description |
Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the spectral range of photosensitivity in the samples in short-wavelength range as compared with that of single crystal silicon. Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has been investigated. The results are explained in the frame of qualitative model that involves formation of p-n-transitions in these structures as a result of inversion of the conductivity type in porous silicon nanocrystals under the influence of adsorption of molecular iodine |
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| Date |
2017-05-31T05:26:19Z
2017-05-31T05:26:19Z 2012 |
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| Type |
Article
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| Identifier |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 73.50.Pz, 73.63.-b http://dspace.nbuv.gov.ua/handle/123456789/118731 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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