Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
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| Creator |
Belyaev, A.E.
Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Sheremet, V.N. |
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| Description |
We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact. |
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| Date |
2017-05-31T05:33:30Z
2017-05-31T05:33:30Z 2010 |
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| Type |
Article
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| Identifier |
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 436-438. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 73.40.Cg, 73.40.Ns, 85.30.-z http://dspace.nbuv.gov.ua/handle/123456789/118737 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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