Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure
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| Creator |
Gorley, P.M.
Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. |
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| Description |
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of current transport through the semiconductor contact were determined, allowing prediction of successful possible applications of the heterojunction studied under high temperatures and elevated radiation due to the parameters of the base semiconductors and the diode structure itself. |
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| Date |
2017-05-31T05:35:56Z
2017-05-31T05:35:56Z 2010 |
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| Type |
Article
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| Identifier |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 73.40.Cg, Gk, Lq http://dspace.nbuv.gov.ua/handle/123456789/118739 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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