Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers
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| Creator |
Rubish, V.M.
Gera, E.B. Pop, M.M. Maryan, V.M. Kostyukevych, S.O. Moskalenko, N.L. Semak, D.G. Kostyukevych, K.V. Kryuchin, A.A. Petrov, V.V. |
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| Description |
The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values of pseudogap width Eg are determined. Optical characteristic changes of films are caused by photo-thermostructural transformations taking place in them under irradiation and annealing. |
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| Date |
2017-05-31T19:43:57Z
2017-05-31T19:43:57Z 2009 |
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| Type |
Article
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| Identifier |
Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers / V.M. Rubish, E.B. Gera, M.M. Pop, V.M. Maryan, S.O. Kostyukevych, N.L. Moskalenko, D.G. Semak, K.V. Kostyukevych, A.A. Kryuchin, V.V. Petrov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 251-254. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 78.66.Jg http://dspace.nbuv.gov.ua/handle/123456789/118869 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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