Electron mobility in CdxHg₁₋xSe
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electron mobility in CdxHg₁₋xSe
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| Creator |
Malyk, O.P.
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| Description |
Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established. |
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| Date |
2017-05-31T19:46:56Z
2017-05-31T19:46:56Z 2009 |
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| Type |
Article
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| Identifier |
Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 72.10.-d, 72.10.Fk, 72.15.-v http://dspace.nbuv.gov.ua/handle/123456789/118873 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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