Peculiarities of neutron irradiation influence on GaP light-emitting structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Peculiarities of neutron irradiation influence on GaP light-emitting structures
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| Creator |
Litovchenko, P.
Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
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| Description |
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their capture by radiation defects. Study of currentvoltage characteristics at 77 K by highly precession methods has revealed the appearance of N-shaped negative differential region caused by carrier tunneling onto deep levels in quantum wells, which might exist in initial and irradiated p-n structures. In some cases, improvement of current-voltage characteristics after neutron irradiation is observed. An assumption is made about the radiation-stimulated origin of this effect. |
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| Date |
2017-05-31T19:47:50Z
2017-05-31T19:47:50Z 2009 |
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| Type |
Article
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| Identifier |
Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118874 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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