Structure and electrical properties of In₂Se₃Mn layered crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structure and electrical properties of In₂Se₃Mn layered crystals
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| Creator |
Kaminskii, V.M.
Kovalyuk, Z.D. Zaslonkin, A.V. Ivanov, V.I. |
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| Description |
Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 wt. %Mn single crystals as well as existence of two phases (In₂Se₃ and MnIn₂Se₄) in polycrystalline ingots In₂Se₃ 6 wt. % Mn. Temperature dependences of the conductivities across (σ⊥C) and along (σ||C) the crystallographic c axis were measured in the range of 80 to 400 K. From the anisotropy σ⊥C/σ||C of conductivity temperature dependences of the energy barrier value ΔЕδ between the layers were calculated for the crystals under investigations. |
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| Date |
2017-05-31T19:53:48Z
2017-05-31T19:53:48Z 2009 |
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| Type |
Article
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| Identifier |
Structure and electrical properties of In₂Se₃Mn layered crystals / V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, and V.I. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 290-293. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS 72.20.Dp, 72.20.-i, 81.10.Fq http://dspace.nbuv.gov.ua/handle/123456789/118878 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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