On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
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| Creator |
Gaidar, G.P.
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| Description |
Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resistance ρX (∞)strain for strain and analogous value for axial pressure deformation ρX (∞)pressure was determined. It gives a possibility to obtain reliable information concerning the value ρX (∞)strain even for the case when mobility of carriers and, consequently, the value ρ = ρ(Х) are significantly decreased, for example, under irradiation treatment of crystals. |
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| Date |
2017-05-31T18:43:44Z
2017-05-31T18:43:44Z 2009 |
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| Type |
Article
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| Identifier |
On methodology of measuring parameters with the increased
sensitivity to residual or irradiation induced inhomogeneities
in semiconductors / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 324-327. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 73.20.Mf, 78.67.Bf http://dspace.nbuv.gov.ua/handle/123456789/118830 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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