A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
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| Creator |
Borblik, V.L.
Shwarts, Yu.M. Shwarts, M.M. |
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| Description |
A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This method is applied here to experimental data for silicon diode in which series resistance is caused by freezing-out free current carriers into impurities at cryogenic temperatures. Character of dependence of the base resistance on electric field in the base layer determined in such way confirms hopping nature of silicon conduction under these conditions. |
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| Date |
2017-05-31T18:47:28Z
2017-05-31T18:47:28Z 2009 |
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| Type |
Article
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| Identifier |
A new method of extraction of a p-n diode series resistance
from I-V characteristics and its application to analysis
of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 71.30.+h, 72.20.Ee, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118832 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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