The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
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| Creator |
Semchuk, O.Yu.
Gichan, О.І. Grechko, L.G. |
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| Description |
Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the maximal diffraction efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also ascertained, that waves belonging to the nearby diffraction orders differ from each other by π/2 in their phase. |
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| Date |
2017-05-31T18:48:22Z
2017-05-31T18:48:22Z 2009 |
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| Type |
Article
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| Identifier |
The Rahman-Nat diffraction on a thin laser-induced grating
of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 75.50.D, 78.20 http://dspace.nbuv.gov.ua/handle/123456789/118833 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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