Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure
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| Creator |
Abbasov, Sh.M.
Aghaverdiyeva, G.T. Ibrahimov, Z.A. Farajova, U.F. Ibrahimova, R.A. Mehdevi, Heyder |
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| Description |
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray diffraction methods. It has been established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the role of traps for change carriers. |
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| Date |
2017-05-31T18:57:38Z
2017-05-31T18:57:38Z 2009 |
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| Type |
Article
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| Identifier |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 42.25.Bs, 78.40.-q, 81.15.-z http://dspace.nbuv.gov.ua/handle/123456789/118836 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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