Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
|
|
| Creator |
Prokopiv, V.V.
Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
|
| Description |
The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (annealing temperature T and partial pressure of cadmium PCd vapor). The dominant types of defects that determine the basic properties of the material n- and p-type conduction were determined. |
|
| Date |
2017-05-31T19:11:33Z
2017-05-31T19:11:33Z 2009 |
|
| Type |
Article
|
|
| Identifier |
Thermodynamic analysis of processes creating
the defects in cadmium telluride crystals under conditions
of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ.
1560-8034 PACS 61.72.Bb, Ji, -y http://dspace.nbuv.gov.ua/handle/123456789/118846 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|