Two-dimensional modeling the static parameters for a submicron field-effect transistor
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Two-dimensional modeling the static parameters for a submicron field-effect transistor
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| Creator |
Zaabat, M.
Draid, M. |
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| Description |
A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor characteristics, the influence of the geometry of the component, like the inter-electrode distance, on the capacities. All simulation revealed the existence of a high contact electric field near the gate, which creates a depopulated zone around the gate, but the preceding studies have neglected the edge effects, which are very significant for the submicron MESFETs. |
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| Date |
2017-05-31T19:12:10Z
2017-05-31T19:12:10Z 2009 |
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| Type |
Article
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| Identifier |
Two-dimensional modeling the static parameters
for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/118847 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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