Stacking Faults in the single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Stacking Faults in the single crystals
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| Creator |
Mihir M. Vora
Aditya M. Vora |
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| Description |
The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal. |
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| Date |
2017-05-31T19:14:24Z
2017-05-31T19:14:24Z 2009 |
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| Type |
Article
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| Identifier |
Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ.
1560-8034 PACS 61.10.-i, 61.72.-y, 61.72.Dd, Nn http://dspace.nbuv.gov.ua/handle/123456789/118848 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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