Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
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| Creator |
Emad Hameed Hussein
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| Description |
The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the contribution of the time constant and the drift time in the rise time within the depletion layer can be decreased to an optimal value (less than 1ns) just for specific value of the depletion layer width and smaller value of the diffused junction area. |
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| Date |
2017-05-31T19:16:27Z
2017-05-31T19:16:27Z 2009 |
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| Type |
Article
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| Identifier |
Approaching to an optimal value of rise time in n-well/p substrate
photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 73.40.-c, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118849 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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