Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
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| Creator |
Nazarov, A.N.
Lysenko, V.S. Nazarova, T.M. |
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| Description |
The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO₂-Si interface and SiO₂-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials. |
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| Date |
2017-05-31T19:28:40Z
2017-05-31T19:28:40Z 2008 |
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| Type |
Article
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| Identifier |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers / A.N. Nazarov, V.S. Lysenko, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 101-123. — Бібліогр.: 143 назв. — англ.
1560-8034 PACS 52.77.-j, 61.72.Tt, 68.55.Jk, 73.63.-b http://dspace.nbuv.gov.ua/handle/123456789/118855 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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