Direct current transport mechanisms in n-InSe/p-CdTe heterostructure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure
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| Creator |
Gorley, P.M.
Prokopenko, I.V. Grushka, Z.M. Makhniy, V.P. Grushka, O.G. Chervinsky, O.A. |
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| Description |
The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current transport mechanisms in the structure. It was shown that misfit dislocations at the boundary between the semiconductors form a stable periodic structure acting as slow recombination centers for the carriers. The properties of the material suggest promising application perspectives for n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures and elevated radiation. |
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| Date |
2017-05-31T19:29:18Z
2017-05-31T19:29:18Z 2008 |
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| Type |
Article
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| Identifier |
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure / P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 124-131. — Бібліогр.: 34 назв. — англ.
1560-8034 PACS 73.40.Cg, Gk, Lq http://dspace.nbuv.gov.ua/handle/123456789/118856 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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