Research of Structural Quality of Big-Size KDP Crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Research of Structural Quality of Big-Size KDP Crystals
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| Creator |
Salo, V.I.
Tkachenko, V.F. Puzikov, V.M. |
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| Description |
The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown crystal by X-ray diffraction methods with high resolution. It has been determined that, regardless of the seed form, the transitional layer in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal lattice parameter (∆d/d) within ±2.5·10⁻⁵ and the halfwidth of a diffraction reflection curve (β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of the integral power of reflection of the X-ray beam IR by 1.5 times are observed in the transitional lay |
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| Date |
2017-05-31T19:26:16Z
2017-05-31T19:26:16Z 2008 |
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| Type |
Article
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| Identifier |
Research of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 61.10.-i http://dspace.nbuv.gov.ua/handle/123456789/118853 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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