Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
|
|
| Creator |
Saliy, Ya.P.
Freik, I.M. Prokopiv (Jr), V.V. |
|
| Description |
The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film electrophysical parameters (concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors of film growth. We have calculated concentrations of activated and inactivated defects as subject to temperature of film deposition. The developed model enables determination of entropy and enthalpy of defect formation processes. |
|
| Date |
2017-05-31T19:23:31Z
2017-05-31T19:23:31Z 2008 |
|
| Type |
Article
|
|
| Identifier |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS 71.20.Nr, 71.55.-i, 81.15.Aa http://dspace.nbuv.gov.ua/handle/123456789/118850 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|