Coulomb blockade of spin-dependent shuttling
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Coulomb blockade of spin-dependent shuttling
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| Creator |
Park, Hee Chul
Kadigrobov, A.M. Shekhter, R.I. Jonson, M. |
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| Subject |
Электронные свойства проводящих систем
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| Description |
We show that nanomechanical shuttling of single electrons may enable qualitatively new functionality if spin-polarized electrons are injected into a nanoelectromechanical single-electron tunneling (NEM-SET) device. This is due to the combined effects of spin-dependent electron tunneling and Coulomb blockade of tunneling, which are phenomena that occur in certain magnetic NEM-SET devices. Two effects are predicted to occur in such structures. The first is a reentrant shuttle instability, by which we mean the sequential appearance, disappearance and again the appearance of a shuttle instability as the driving voltage is increased (or the mechanical dissipation is diminished). The second effect is an enhanced spin polarization of the nanomechanically assisted current flow.
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| Date |
2017-06-01T09:25:48Z
2017-06-01T09:25:48Z 2013 |
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| Type |
Article
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| Identifier |
Coulomb blockade of spin-dependent shuttling / Hee Chul Park, A.M. Kadigrobov, R.I. Shekhter, M. Jonson // Физика низких температур. — 2013. — Т. 39, № 12. — С. 1373–1380. — Бібліогр.: 22 назв. — англ.
0132-6414 PACS: 81.07.Oj, 72.25.–b, 73.23.Hk http://dspace.nbuv.gov.ua/handle/123456789/118922 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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