Запис Детальніше

Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers

Vernadsky National Library of Ukraine

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Title Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
 
Creator Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
 
Description The results of low-frequency noise investigation in fully-depleted (FD)
nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI)
and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical
at zero back gate voltage for the devices studied and the density of the corresponding
noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the
HfO2 portion. The results on the McWhorter noise are used for studying the behavior of
the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where
V*
is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE)
Lorentzians appear in the low-frequency noise spectra at an accumulation back gate
voltage and that the parameters of those Lorentzians are different for the sSOI and SOI
nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation
bias for sufficiently wide nMuGFET.
 
Date 2017-06-03T04:43:24Z
2017-06-03T04:43:24Z
2008
 
Type Article
 
Identifier Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 73.50.Td, 85.30.Tv
http://dspace.nbuv.gov.ua/handle/123456789/119049
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України