Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C
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| Creator |
Babych, V.M.
Luchkevych, M.M. Pavlovskyy, Yu.V. Tsmots, V.M. |
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| Description |
By using the Faraday method and complex of electro-physical studies (Hall effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in “vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the presence of deep thermodonors with the ionization energy Еі ≥ 200 meV in these samples contributes to the appearance of a paramagnetic constituent with the magnetic susceptibility (χ par) even at 300 K. χ par in this material does not depend on temperature in the range of 77 - 300 K that can testify on the Van-Fleck origin of this magnetic susceptibility component. Absence of nonlinearities in the dependence χ(H) within the interval 0.3-4 kOe shows uncooperative character of magnetism found out. |
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| Date |
2017-06-03T04:45:30Z
2017-06-03T04:45:30Z 2008 |
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| Type |
Article
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| Identifier |
Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C / V.М. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 226-229. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS 75.20.-g, 75.30.Cr, 75.40.Cx http://dspace.nbuv.gov.ua/handle/123456789/119052 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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