Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures
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| Creator |
Gorishny, M.P.
Verbitsky, A.B. Kovalchuk, A.V. Kovalchuk, T.N. Lutsyk, P.N. |
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| Description |
The optical and photoelectrical properties of heterostructures (HS) SnO₂ТTTC₆₀Ag are investigated. The additional absorption of HS ТTT and C₆₀ is revealed in comparison with those for their components, which testifies to the formation of complexes between the ТTT and C₆₀ molecules near the ТTT-C₆₀ interface. Currentvoltage characteristics (J-V) of a dark current is symmetric, as well as corresponds to the Ohm law for the voltages of 0 to 0.4 V. In the voltage range of 0.4 to 1.0 V, the branch of J-V at the positive polarity (I₊) goes above that at the negative polarity (I₋) at a SnO₂- electrode. Thus, in the double logarithmic scale, I₊ and I₋ are described by direct lines with the angular factors 1.77 and 1.37, accordingly, and exponents in the half-logarithmic coordinates (log I−U). The open-circuit voltage Voc has a positive polarity at the SnO₂- electrode irrespective of the illumination direction of a sample. Photovoltage is caused by antiblocking bends of bands for holes and electrons near the SnO₂- and Ag-electrodes of ТTT and C₆₀ films, accordingly. The dark effective specific resistance of the HS SnO₂ТTTC₆₀Ag is equal to 5·10⁷ Ohm·cm. |
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| Date |
2017-06-03T04:48:38Z
2017-06-03T04:48:38Z 2008 |
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| Type |
Article
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| Identifier |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures / M.P. Gorishny, A.B. Verbitsky, A.V. Kovalchuk, T.N. Kovalchuk, P.N. Lutsyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 236-239. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 73.50.Pz, 73.61.Wp, 78.66.Tr http://dspace.nbuv.gov.ua/handle/123456789/119055 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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