Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
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| Creator |
Javidi, S.
Faripour, H. Esmaeil Nia, M. Sepehri, K.F. Ali Akbari, N. |
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| Description |
A solution growth system has been built based on temperature reduction method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm dimensions. Spectrophotometer transmission spectra from (100) planes of the grown crystals show about 86 % transmission in the visible region. XRD analysis, laser damage threshold, and microhardness of the crystals were determined. The etching behavior of surface features of grown KDP single crystals was studied in different etchants. |
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| Date |
2017-06-03T04:50:29Z
2017-06-03T04:50:29Z 2008 |
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| Type |
Article
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| Identifier |
Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 42.70.Mp, 77.84.Fa, 81.10.Dn http://dspace.nbuv.gov.ua/handle/123456789/119058 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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