Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
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Creator |
Osinniy, V.
Dybko, K. Jedrzejczak, A. Arciszewska, M. Dobrowolski, W. Story, T. Radchenko, M.V. Sichkovskiy, V.I. Lashkarev, G.V. Olsthoorn, S.M. Sadowski, J. |
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Description |
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic and non-metallic types of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. |
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Date |
2017-06-03T04:51:52Z
2017-06-03T04:51:52Z 2008 |
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Type |
Article
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Identifier |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.
1560-8034 PACS 73.50.Lw, 73.61.Ey, 75.50.Pp http://dspace.nbuv.gov.ua/handle/123456789/119060 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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