Запис Детальніше

Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

Vernadsky National Library of Ukraine

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Title Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
 
Creator Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
 
Description Thermoelectric power, electrical conductivity, and high field Hall effect were
studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers
(0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier
transport mechanisms in layers with both metallic and non-metallic types of conductivity
and allows determination of the Fermi energy and carrier concentration. At high
temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases
with increasing temperature. That indicates the presence of a degenerate hole gas
with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for
0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity
show an additional contribution to the thermoelectric power with the maximum close to
the Curie temperature.
 
Date 2017-06-03T04:51:52Z
2017-06-03T04:51:52Z
2008
 
Type Article
 
Identifier Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.
1560-8034
PACS 73.50.Lw, 73.61.Ey, 75.50.Pp
http://dspace.nbuv.gov.ua/handle/123456789/119060
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України