Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique
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| Creator |
Movchan, S.
Sizov, F. Tetyorkin, V. |
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| Description |
Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed.
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| Date |
2017-06-03T04:57:29Z
2017-06-03T04:57:29Z 1999 |
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| Type |
Article
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| Identifier |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS 71.28, 72.20, 73.40 http://dspace.nbuv.gov.ua/handle/123456789/119065 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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