Semiconductor sensors for dosimetry of epithermal neutrons
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Semiconductor sensors for dosimetry of epithermal neutrons
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| Creator |
Litovchenko, P.G.
Moss, R. Stecher-Rasmussen, F. Appelman, K. Barabash, L.I. Kibkalo, T.I. Lastovetsky, V.F. Litovchenko, A.P. Pinkovska, M.B. |
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| Description |
Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result, we have obtained considerably more sensitive sensors for more wide range of neutron doses. The sensitivity of sensors is 0.14 V/Gy for average neutron energy of 24 keV.
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| Date |
2017-06-03T04:58:38Z
2017-06-03T04:58:38Z 1999 |
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| Type |
Article
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| Identifier |
Semiconductor sensors for dosimetry of epithermal neutrons / P.G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L.I. Barabash, T.I. Kibkalo, V.F. Lastovetsky, A.P. Litovchenko, M.B. Pinkovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 90-91. — Бібліогр.: 4 назв. — англ.
1560-8034 PACS 29.40.Wk http://dspace.nbuv.gov.ua/handle/123456789/119067 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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