Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
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| Creator |
Nazarov, A.N.
Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.N. Rebohle, L. Skorupa, W. |
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| Description |
In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescent and durability of SiO₂ (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross sections of both electron traps and hole traps were determined. EL quenching at a great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures. |
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| Date |
2017-06-03T05:04:44Z
2017-06-03T05:04:44Z 2008 |
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| Type |
Article
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| Identifier |
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ.
1560-8034 PACS 68.35,78.55 http://dspace.nbuv.gov.ua/handle/123456789/119072 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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