Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
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| Creator |
Nazarov, A.N.
Gomeniuk, Y.V. Gomeniuk, Y.Y. Lysenko, V.S. Gottlob, H.D.B. Schmidt, M. Lemme, M.C. Czernohorsky, M. Ostenc, H.J. |
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| Description |
Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. It was shown that the large leakage current at a negative gate voltage causes the reversible trapping of the positive charge in the dielectric layer, without electrical degradation of the dielectric and dielectricsemiconductor interface. The capture cross-sections of the hole traps are around 10⁻¹⁸ and 2 × 10⁻²⁰ cm² . The respective shift of the C–V curve correlates with a “plateau” at the capacitance corresponding to weak accumulation at the silicon interface. |
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| Date |
2017-06-03T05:06:29Z
2017-06-03T05:06:29Z 2008 |
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| Type |
Article
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| Identifier |
Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 73.20.-r http://dspace.nbuv.gov.ua/handle/123456789/119074 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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