The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
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| Creator |
Solntsev, V.S.
Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. |
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| Description |
The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitancevoltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena. |
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| Date |
2017-06-03T05:12:45Z
2017-06-03T05:12:45Z 2008 |
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| Type |
Article
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| Identifier |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ.
1560-8034 PACS 07.07.Df, 68.43.Bc, 68.47.Fg http://dspace.nbuv.gov.ua/handle/123456789/119080 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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