Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
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| Creator |
Pidkova, V.
Brodnikovska, I. Duriagina, Z. Petrovskyy, V. |
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| Subject |
Characterization and properties
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| Description |
Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed.
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| Date |
2017-06-04T13:48:57Z
2017-06-04T13:48:57Z 2014-12-12 |
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| Type |
Article
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| Identifier |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ.
1027-5495 DOI: http://dx.doi.org/10.15407/fm22.01.034 http://dspace.nbuv.gov.ua/handle/123456789/119115 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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