The influence of ion implantation by phosphorous on structural changes in porous silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The influence of ion implantation by phosphorous on structural changes in porous silicon
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| Creator |
Swiatek, Z.
Lytvynchuk, I. Fodchuk, I. |
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| Description |
Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and quantitative differences in the thickness dependences of strains, values of maximum strain, level of lattice disturbance and extension of elastic strains nave been revealed after different steps of treatment. The essential modification of photoluminescence spectra was observed in the porous layer after implantation by phosphorus ions in the process of natural aging.
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| Date |
2017-06-04T16:48:43Z
2017-06-04T16:48:43Z 2004 |
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| Type |
Article
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| Identifier |
The influence of ion implantation by phosphorous on structural changes in porous silicon / Z. Swiatek, I. Lytvynchuk, I. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 231-235. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS: 61.43.Gt http://dspace.nbuv.gov.ua/handle/123456789/119136 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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