Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes
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| Creator |
Oksanich, A.P.
Pritchin, S.E. Vasheruk, A.V. |
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| Description |
The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration.
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| Date |
2017-06-04T15:51:17Z
2017-06-04T15:51:17Z 2004 |
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| Type |
Article
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| Identifier |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 42.65; 42.70; 61.70 http://dspace.nbuv.gov.ua/handle/123456789/119116 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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