Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films
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| Creator |
Gentsar, P.A.
Kudryavtsev, A.A. |
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| Description |
The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation.
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| Date |
2017-06-04T15:52:49Z
2017-06-04T15:52:49Z 2004 |
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| Type |
Article
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| Identifier |
Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films / P.A. Gentsar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 240-242. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS: 73.20; 78.66 http://dspace.nbuv.gov.ua/handle/123456789/119117 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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