Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters
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| Creator |
Avdeev, S.P.
Agueev, O.A. Konakova, R.V. Kudryk, Ya.Ya. Lytvyn, O.S. Lytvyn, P.M. Milenin, V.V. Sechenov, D.A. Svetlichny, A.M. Soloviev, S.I. Sudarshan, T.S. |
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| Description |
We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC contacts. The results obtained show that pulse thermal treatment is an efficient technique for local change of parameters of heterogeneous metal/silicon carbide structures.
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| Date |
2017-06-04T16:00:24Z
2017-06-04T16:00:24Z 2004 |
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| Type |
Article
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| Identifier |
Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters / S.P. Avdeev, O.A. Agueev, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, V.V. Milenin, D.A. Sechenov, A.M. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 272-278. — Бібліогр.: 30 назв. — англ.
1560-8034 PACS: 73.40.Cg http://dspace.nbuv.gov.ua/handle/123456789/119122 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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