Запис Детальніше

Interface electronic properties of eterojunctions based on nanocrystalline silicon

Vernadsky National Library of Ukraine

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Поле Співвідношення
 
Title Interface electronic properties of eterojunctions based on nanocrystalline silicon
 
Creator Kaganovich, E.B.
Kirillova, S.I.
Manoilov, E.G.
Primachenko, V.E.
Svechnikov, S.V.
 
Description For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto substrates situated at a distance from the target and onto the plane of target were studied. The temperature dependencies of concentration of charge carriers captured in the traps in the heterojunction interface, and of distribution of density of surface electron states on energy were calculated. The connections between conditions of heterojunction fabrication and their electronic properties are clarified.
 
Date 2017-06-04T11:49:44Z
2017-06-04T11:49:44Z
1999
 
Type Article
 
Identifier Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ.
1560-8034
PACS 73.20.D, 81.15.F
http://dspace.nbuv.gov.ua/handle/123456789/119107
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України