Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
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| Creator |
Asghar, M.H.
Khan, M.B. Naseem, S. |
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| Description |
Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of the filter for the two substrates is varied by varying the refractive index of a single layer in the multilayer stack. The design is also analyzed for zero and 45 degree angles of incidence. The analysis has shown that the designed configuration exhibits identical behavior for these two substrates. The proposed configuration could be used for different optical and optoelectronic applications.
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| Date |
2017-06-05T09:31:24Z
2017-06-05T09:31:24Z 2004 |
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| Type |
Article
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| Identifier |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ.
1560-8034 PACS: 42.79Wc, 78.20e http://dspace.nbuv.gov.ua/handle/123456789/119214 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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