Active layer – semi-insulating substrate interface effect on GaAs MESFET components
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components
|
|
| Creator |
Belgat, M.
Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. |
|
| Description |
This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to determine the active layer and interface parameters. The properties of the drain current and the output admittance characteristics as well as the physical phenomena inherent to this interface are assigned to the dynamic response of the double space charge region.
|
|
| Date |
2017-06-05T09:37:22Z
2017-06-05T09:37:22Z 2004 |
|
| Type |
Article
|
|
| Identifier |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 68.35.-p, 68.35.Ct http://dspace.nbuv.gov.ua/handle/123456789/119217 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|