Accurate numerical modelling the GaAs MESFET current-voltage characteristics
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics
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| Creator |
Merabtine, N.
Khemissi, S. Zaabat, M. Belgat, M. Kenzai, C. |
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| Description |
In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In this frame, we elaborated a simulation software based on analysis of expressions that we have previously set up [1-3], the obtained theoretical results are discussed and compared to the experimental ones.
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| Date |
2017-06-05T09:20:44Z
2017-06-05T09:20:44Z 2004 |
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| Type |
Article
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| Identifier |
Accurate numerical modelling the GaAs MESFET current-voltage characteristics / N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 389-394. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS: 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/119205 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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