On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals
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| Creator |
Zhirko, Yu.I.
Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. |
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| Description |
Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms per a formula unit of a crystal matrix) stems from the increasing dielectric permittivity of the crystal ε₀ due to availability of hydrogen in the van der Waals gap. Growth of ε₀(x) results in decrease of the exciton binding energy but, at larger x concentrations (when the anisotropy parameter ε*(х) grows), 2D localization of exciton motion in the crystal layer plane takes place, which causes reduction and then, at x > 1, stabilization of sizes both for the exciton and quantum well.
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| Date |
2017-06-05T09:25:05Z
2017-06-05T09:25:05Z 2004 |
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| Type |
Article
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| Identifier |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ.
1560-8034 PACS: 71.35.Cc, 78.40.Fy http://dspace.nbuv.gov.ua/handle/123456789/119208 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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