Photoelectrical characteristics of two-dimensional macroporous silicon structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoelectrical characteristics of two-dimensional macroporous silicon structures
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| Creator |
Karachevtseva, L.A.
Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. |
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| Description |
Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility.
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| Date |
2017-06-05T14:28:25Z
2017-06-05T14:28:25Z 2004 |
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| Type |
Article
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| Identifier |
Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 71.25.Rk, 81.60Cp http://dspace.nbuv.gov.ua/handle/123456789/119227 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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