Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
|
|
| Creator |
Baranskii, P.I.
Babich, V.M. Venger, E.F. |
|
| Description |
Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed. These factors are: - dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type), - electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction. Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction. |
|
| Date |
2017-06-05T14:41:29Z
2017-06-05T14:41:29Z 2001 |
|
| Type |
Article
|
|
| Identifier |
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS: 61.72.T, 71.55, 72.80.P http://dspace.nbuv.gov.ua/handle/123456789/119232 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|