Effect of surface condition on strain in semiconductor crystal sample
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of surface condition on strain in semiconductor crystal sample
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| Creator |
Serdega, B.K.
Nikitenko, E.V. Prikhodenko, V.I. |
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| Description |
Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal.
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| Date |
2017-06-05T14:47:58Z
2017-06-05T14:47:58Z 2001 |
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| Type |
Article
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| Identifier |
Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 78.20.C http://dspace.nbuv.gov.ua/handle/123456789/119234 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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