Structural investigations of annealed ZnS:Cu, Ga film phosphors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Structural investigations of annealed ZnS:Cu, Ga film phosphors
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| Creator |
Lytvyn, O.S.
Khomchenko, V.S. Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Prokopenko, I.V. Rodionov, V.Ye. Tzyrkunov, Yu.A. |
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| Description |
X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied for improvement electro-physical parameters of ZnS:Cu based thin film electroluminescent devices. The annealing was carried out at the temperature of 850 °C. Ga co-doping was applied for the same structures in the course of the annealing process. It was shown that recrystallization process at annealing leads to improvement of ZnS:Cu films structural perfection without changes of crystal structure. This improvement provides tenfold increase of photo- and electroluminescence brightness and decrease of threshold voltage down to 10 V, as well as enhancement of device stability against degradation.
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| Date |
2017-06-05T16:15:25Z
2017-06-05T16:15:25Z 2001 |
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| Type |
Article
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| Identifier |
Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS: 61.10.H, 61.16.C, 78.55, 78.60.F http://dspace.nbuv.gov.ua/handle/123456789/119243 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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