Electrical properties of macroporous silicon structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical properties of macroporous silicon structures
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| Creator |
Karachevtseva, L.A.
Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
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| Description |
The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls.
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| Date |
2017-06-05T15:59:59Z
2017-06-05T15:59:59Z 2001 |
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| Type |
Article
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| Identifier |
Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS: 71.25.Rk, 81.60.Cp http://dspace.nbuv.gov.ua/handle/123456789/119238 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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