Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes
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| Creator |
Vlasenko, N.A.
Kononets, Ya.F. Denisova, Z.L. Kopytko, Yu.V. Veligura, L.I. Soininen, El. Tornqvist, R.O. Vasama, K.M. |
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| Description |
Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors have been studied during initial stage of accelerated aging. Essential differences have been revealed. They are explained in assumption that different impurity centers exist in the ZnS:Mn films grown by using chlorine and metalorganic precursors, namely, MnCl₂, Cli⁻, Cls⁺ and isovalent oxygen traps, respectively. The mechanism of aging in both types of devices is discussed.
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| Date |
2017-06-05T16:10:16Z
2017-06-05T16:10:16Z 2001 |
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| Type |
Article
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| Identifier |
Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes / N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tornqvist, K.M. Vasama // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 48-55. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS: 78.60.Fi, 78.66.Hf, 71.55.Gs http://dspace.nbuv.gov.ua/handle/123456789/119240 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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