Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
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| Creator |
Lysenko, V.S.
Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
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| Description |
Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation
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| Date |
2017-06-05T16:19:41Z
2017-06-05T16:19:41Z 2001 |
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| Type |
Article
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| Identifier |
Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS: 68.35, 72.20.J, 73.20, 73.40,85.30.T http://dspace.nbuv.gov.ua/handle/123456789/119246 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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